The electron-beam and x-ray lithographic performance of the high resolution CAMP and ARCH family of chemically amplified resists

Microelectronic Engineering

Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 229-239

  Novembre, Anthony E ^a   Münzel, Norbert ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b OCG Microelectronic Materials AG   (Switzerland)

Author keywords

Acid catalyzed deprotection; Critical dimension control; PhotoAcid generation; Process latitude

Indexed keywords

COPOLYMERS; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; OPTIMIZATION; PERFORMANCE; PHOTORESISTORS; PROCESS CONTROL; X RAY LITHOGRAPHY;

PATTERNING;

ELECTRON BEAM LITHOGRAPHY;

EID: 0030231573     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(96)00009-3     Document Type: Article

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