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Volumn 24, Issue 6, 1998, Pages 467-469

Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

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[No Author keywords available]

Indexed keywords


EID: 0032363827     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262149     Document Type: Article
Times cited : (6)

References (12)
  • 8
    • 0040795784 scopus 로고    scopus 로고
    • V. N. Zhmerik, S. V. Ivanov, M. V. Maksimov, V. M. Kuznetsov, N. N. Ledentsov, S. V. Sorokin, S. B. Domrachev, N. M. Shmidt, I. L. Krestnikov, and P. S. Kop'ev, Fiz. Tekh. Poluprovodn. 30, 1071 (1996) [Semiconductors 30, 568 (1996)].
    • (1996) Semiconductors , vol.30 , pp. 568


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.