Doping of ZnSe during molecular-beam epitaxy using a high-efficiency source of active nitrogen

Semiconductors

Volumn 30, Issue 6, 1996, Pages 568-574

  Zhmerik, V N ^a   Ivanov, S V ^a   Maksimov, M V ^a   Kuznetsov, V M ^a   Ledentsov, N N ^a   Sorokin, S V ^a   Domrachev, S N ^a   Shmidt, N M ^a   Krestnikov, I L ^a   Kop'ev, P S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0040795784     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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