SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 134-146

Supersonic jet epitaxy of III-nitride semiconductors

(2) Ferguson, B A a Mullins, C B a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; EPITAXIAL GROWTH; FILM GROWTH; NITRIDES; PLASMA JETS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERSONIC FLOW; NITROGEN;

NITRIDE SEMICONDUCTORS; SUPERSONIC JET EPITAXY; ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0031150302 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00080-8 Document Type: Article

Times cited : (19)

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