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Volumn 40, Issue 6, 1993, Pages 1721-1724

Monitoring SEU Parameters at Reduced Bias

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; IONS; MONITORING; NEUTRONS; PROTONS; RADIATION EFFECTS; RADIATION HARDENING; RANDOM ACCESS STORAGE; SENSITIVITY ANALYSIS;

EID: 0027841916     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273487     Document Type: Article
Times cited : (21)

References (8)
  • 4
    • 0026400769 scopus 로고
    • Determination of SEU Parameters of NMOS and CMOS SRAMS
    • P.J. McNulty, W.J. Beauvais, and D.R. Roth, “Determination of SEU Parameters of NMOS and CMOS SRAMS,” IEEE Trans. Nucl. Sci. NS-38, 1463–1470 (1991)
    • (1991) IEEE Trans. Nucl. Sci , vol.NS-38 , pp. 1463-1470
    • McNulty, P.J.1    Beauvais, W.J.2    Roth, D.R.3
  • 5
    • 84939369220 scopus 로고    scopus 로고
    • SEU Parameters and Proton-Induced Upsets
    • to be presented at the RADECS Conference
    • W.J. Beauvais, P.J. McNulty, W.G. Abdel-Kader, and R.A. Reed, “SEU Parameters and Proton-Induced Upsets”, to be presented at the RADECS Conference.
    • Beauvais, W.J.1    McNulty, P.J.2    Abdel-Kader, W.G.3    Reed, R.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.