SEU test techniques for 256K static RAMs and comparisons of upsets induced by heavy ions and protons

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1638-1643

  Koga, R ^a   Kolasinski, W A ^a   Osborn, J V ^a   Elder, J H ^a   Chitty, R ^b  

^a AEROSPACE CORPORATION   (United States)

^b Fairchild Space Company ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--RANDOM ACCESS; ION BEAMS; PROTONS;

RADIATION HARDENING; SINGLE EVENT UPSETS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024171214     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25512     Document Type: Article

References (6)

1. Koga, R., W. A. Kolasinski and S. Imamoto, “Heavy Ion Induced Upsets in Semiconductor Devices,” IEEE Trans. Nucl. Sci., NS-32, 159, 1985.
2. Koga, R., and W. A. Kolasinski, “Effects of Heavy Ions on Microcircuits in Space: Recently Investigated Upset Mechanisms,” IEEE Trans. Nucl. Sci., NS-34, 46, 1987.
3. Campbell, A. B., W. J. Stapor, R. Koga and W. A. Kolasinski, “Correlated Proton and Heavy Ion Upset Mechanisms on IDT Static RAMs,” IEEE Trans. Nucl. Sci., NS-32, 4150, 1985.
4. Adams, J. H., R. Silberberg and C. H. Tsao, “Cosmic Ray Effects on Microcircuits, Part I: The Near-Earth Particle Environment,” NRL Memorandum Report 4506, 1981.
5. Petersen, E. L., P. Shapiro, J. H. Adams and E. A. Burke, “Calculation of Cosmic-Ray Induced Soft Upsets,” IEEE Trans. Nucl. Sci., NS-29, 2055, 1982.
6. Private Communication: Yamamoto, Y., Central Research Laboratory, Hitachi, Ltd., July, 1988.