Self-aggregation of InAs quantum dots on (N11) GaAs substrates

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 9-12

  Sanguinetti, S ^a   Fortina, S C ^a   Miotto, A ^c   Grilli, E ^a   Guzzi, M ^a   Henini, M ^b   Polimeni, A ^b   Eaves, L ^b  

^a INFM   (Italy)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c NONE

Author keywords

(N11) GaAs; InAs quantum dots; Self aggregation

Indexed keywords

AGGLOMERATION; CRYSTAL ORIENTATION; DEPOSITION; GROUND STATE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SELF-AGGREGATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032310726     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01291-7     Document Type: Article

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