Single-transverse mode and stable-polarization operation under high-speed modulation of inGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1676-1678

  Nishiyama, Nobuhiko ^b   Mizutani, Akimasa ^b   Hatori, Nobuaki ^b   Arai, Masakazu ^b   Koyama, Fumio ^a,b   Iga, Kenichi ^a,b  

^a IEEE

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAs (311)B substrates; High speed modulation; Polarization control; Single mode laser; Surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; LASER MODES; LIGHT MODULATION; LIGHT POLARIZATION; OXIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ORTHOGONAL POLARIZATION SUPPRESSION RATIO; SIDEMODE SUPPRESSION RATIO; SINGLE TRANSVERSE MODE; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASER GROWN;

SEMICONDUCTOR LASERS;

EID: 0032304302     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730466     Document Type: Article

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