Analysis of iron precipitation in silicon as a basis for gettering simulations

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4259-4264

  Hieslmair, H ^a   Istratov, A A ^a,b   McHugo, S A ^a,c   Flink, C ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; DENSITY (SPECIFIC GRAVITY); GETTERS; IRON; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); REACTION KINETICS;

GETTERING; OXYGEN PRECIPITATE DENSITY;

SEMICONDUCTING SILICON;

EID: 0032296573     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838948     Document Type: Article

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