Chemical-vapor deposition of OH-free and low-k organic-silica films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6369-6373

  Uchida, Yasutaka ^a   Taguchi, Kohshi ^a   Nagai, Tomonori ^a   Sugahara, Satoshi ^b   Matsumura, Masakiyo ^b  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Alkyl silyl iso cyanates; Chemical vapor deposition; Dielectric constant; Inter metal insulator; Organic silica film

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; PERMITTIVITY; SILICA; VACUUM TECHNOLOGY;

INTERMETAL INSULATORS; ORGANIC SILICA FILMS;

ELECTRIC INSULATING MATERIALS;

EID: 0032295750     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6369     Document Type: Article

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