Step-coverage characteristics of silicon-dioxide films formed by a new low-temperature chemical-vapor-deposition method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 8 PART A, 1997, Pages

  Uchida, Yasutaka ^a   Takei, Shu ^a   Matsumura, Masakiyo ^b  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

Author keywords

Chemical vapor deposition; Inter insulator; Interconnection; L; Silicon dioxide; Step coverage

Indexed keywords

AMINES; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; FILM GROWTH; LSI CIRCUITS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICA;

OPEN CAVITY TESTS;

SEMICONDUCTING FILMS;

EID: 0031200074     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l993     Document Type: Article

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