Chemical vapor deposition of hydrogen-free silicon-dioxide films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1509-1512

  Ughida, Yasutaka ^a   Takei, Shu ^a   Matsumura, Masakiyo ^b  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition; CVD; Insulating thin film; Silicon dioxide; Tertiary alkyl amine; Tetra iso cyanate silane

Indexed keywords

EID: 0342313947     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1509     Document Type: Article

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