Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2239-2250

  Kopf, R F ^a   Hamm, R A ^a   Malik, R J ^b   Ryan, R W ^a   Burm, J ^a   Tate, A ^a   Chen, Y K ^a   Georgiou, G ^a   Lang, D V ^a   Geva, M ^a   Ren, F ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Ovation Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON CYCLOTRON RESONANCE; PLASMA ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

HIGH SPEED CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032295453     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00221-4     Document Type: Article

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