Compensation mechanism of undoped GaAs films grown by molecular beam epitaxy using an As-valved cracker cell

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 409-413

  Hong, C U ^a   Gozu, S ^a   Okayasu, J ^a   Koyano, M ^a   Katayama, S ^a   Hori, H ^a   Yamada, S ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HALL EFFECT; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CRACKER CELLS;

SEMICONDUCTING FILMS;

EID: 17144463165     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00092-0     Document Type: Article

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