Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 2112-2122

  Ramvall, P ^a   Carlsson, N ^a   Omling, P ^a   Samuelson, L ^a   Seifert, W ^a   Wang, Q ^a   Ishibashi, K ^b   Aoyagi, Y ^b  

^a LUND UNIVERSITY   (Sweden)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004687467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368272     Document Type: Article

References (74)

1. U. K. Mishra, A. S. Brown, M. J. Delaney, P. T. Greiling, and C. F. Krumm, IEEE Trans. Microwave Theory Tech. 37, 1279 (1989).
2. T. Palm and L. Thylén, Appl. Phys. Lett. 60, 237 (1992).
3. P. Ramvall, P. Omling, T. Palm, and L. Thylén, Proceedings of The Second International Symposium on Quantum Confinement Physics and Applications (The Electrochemical Society INC, San Francisco, 1994), p. 76.
4. P. Omling, P. Ramvall, T. Palm, and L. Thylén, Proceedings of The 22nd International Conference on the Physics of Semiconductors, Vancouver, 1994 (World Scientific, Singapore, 1995), p. 1649.
5. J. A. d. Alamo and C. C. Eugster, Appl. Phys. Lett. 56, 78 (1990).
6. C. C. Eugster, J. A. d. Alamo, M. J. Rooks, and M. R. Melloch, Appl. Phys. Lett. 60, 642 (1992).
7. F. Sols, M. Macucci, U. Ravaioli, and K. Hess, J. Appl. Phys. 66, 3892 (1989).
8. S. Subramaniam, S. Bandyopadhyay, and W. Porod, J. Appl. Phys. 68, 4861 (1990).
9. K. Aihara, M. Yamamoto, and T. Mizutani, Appl. Phys. Lett. 63, 3595 (1993).
10. S. Bandyopadhyay, S. Datta, and M. R. Melloch, Superlattices Microstruct. 2, 539 (1986).
11. S. Bandyopadhyay and W. Porod, Appl. Phys. Lett. 53, 2323 (1988).
12. M. Okuda, Appl. Phys. Lett. 63, 3309 (1993).
13. G. Fasol and H. Sakaki, Appl. Phys. Lett. 62, 2230 (1993).
14. G. Fasol and H. Sakaki, Jpn. J. Appl. Phys., Part 1 33, 879 (1994).
15. K. J. Thomas, J. T. Nicholls, M. Y. Simmons, M. Pepper, D. R. Mace, and D. A. Ritchie, Phys. Rev. Lett. 77, 135 (1996).
16. G. Fasol and H. Sakaki, Phys. Rev. Lett. 70, 3643 (1993).
17. H. Chang, R. Grundbacher, T. Kawamura, J.-P. Leburton, and I. Adesida, Semicond. Sci. Technol. 9, 210 (1994).
18. B. J. v. Wees, G. I. Meijer, J. J. Kuipers, T. M. Klapwijk, W. v. d. Graaf, and G. Borghs, Phys. Rev. B 51, 7973 (1995).
19. G. Müller, D. Weiss, K. v. Klitzing, K. Ploog, H. Nickel, W. Schlapp, and R. Lösch, Phys. Rev. B 46, 4336 (1992).
20. H. Hardtdegen, R. Meyer, M. Hollfelder, T. Schäpers, J. Appenzeller, H. Løken-Larsen, T. Klocke, C. Dieker, B. Lengeler, H. Lüth, and W. Jäger, J. Appl. Phys. 73, 4489 (1993).
21. P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, and W. Seifert, Superlattices Microstruct. 21, 231 (1997).
22. C. Wetzel, A. L. Efros, A. Moll, B. K. Meyer, P. Omling, and P. Sobkowicz, Phys. Rev. B 45, 14052 (1992).
23. P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, M. Stolze, and Q. Wang, Appl. Phys. Lett. 68, 1111 (1996).
24. P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, and Q. Wang, Appl. Phys. Lett. 70, 243 (1997).
25. W. Seifert, K. Deppert, J. O. Fornell, X. Liu, S. Nilsson, M.-E. Pistol, and L. Samuelson, J. Cryst. Growth 124, 531 (1992).
26. A. Gold, Phys. Rev. B 38, 10798 (1988).
27. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, Appl. hys. Lett. 51, 1934 (1987).
28. A. Gold, Z. Phys. B 74, 53 (1989).
29. P.Ramrall, S. Anand, N. Carlsson, S.-B. Carlsson, P. Omling, L. Samuelson, W. Seifert, P. Tidlund, Q. Wang, and L.-E. Wernerson, Proceedings of the 8th International Conference on InP and Related Materials (Institute of Electrical and Electronics Engineers, Schwäbisch, Gmünde, Germany, 1996), p. 689.
30. N. Carlsson, S. Anand, S.-B. Carlsson, B. Gustafson, P. Omling, P. Ramvall, L. Samuelson, W. Seifert, and Q. Wang, J. Cryst. Growth 170, 127 (1996).
31. W. Walukiewicz, H. E. Ruda, J. Lagowski, and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).
32. H. P. Wei, D. C. Tsui, and M. Razeghi, Appl. Phys. Lett. 45, 666 (1984).
33. N. Q. Balaban, U. Meirav, and H. Shtrikman, Phys. Rev. Lett. 71, 1443 (1993).
34. P. C. v. Son, G. H. Kruithof, and T. M. Klapwijk, Phys. Rev. B 42, 11267 (1990).
35. Y. Sugiyama, K. Sano, S. Uekusa, and T. Nakagawa, Proceedings of 7th International Conference on InP and Related Materials (Institute of Electrical and Electronics Engineers, Sapporo, Japan, 1995), p. 217.
36. R. G. Alonso, A. Mascarenhas, S. Froyen, G. S. Horner, K. Bertness, and J. M. Olson, Solid State Commun. 85, 1021 (1993).
37. K. Y. Cheng, K. C. Hsieh, and J. N. Baillargeon, Appl. Phys. Lett. 60, 2892 (1992).
38. L. Pfeiffer, K. W. West, H. L. Stormer, and K. W. Baldwin, Appl. Phys. Lett. 55, 1888 (1989).
39. C. T. Foxon, J. J. Harris, D. Hilton, J. Hewett, and C. Roberts, Semicond. Sci. Technol. 4, 582 (1989).
40. C. W. J. Beenakker and H. v. Houten, in Solid State Physics, edited by H. Ehrenreich and D. Turnbull (Academic, San Diego, CA, 1991), Vol. 44.
41. A. Gold, Phys. Rev. B 46, 2339 (1992).
42. B. K. Meyer, M. Drechsler, C. Wetzel, V. Härle, F. Scholz, H. Linke, P. Omling, and P. Sobkowicz, Appl. Phys. Lett. 63, 657 (1993).
43. T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).
44. J. A. Brum and G. Bastard, Solid State Commun. 53, 727 (1985).
45. G. Bastard, Appl. Phys. Lett. 43, 591 (1983).
46. P. K. Basu and B. R. Nag, Appl. Phys. Lett. 43, 689 (1983).
47. R. B. Dingle, Proc. R. Soc. London, Ser. A 211, 517 (1952).
48. B. Das, S. Subramaniam, M. R. Melloch, and D. C. Miller, Phys. Rev. B 47, 9650 (1993).
49. G. Müller, P. Streda, D. Weiss, K. v. Klitzing, and G. Weimann, Phys. Rev. B 50, 8938 (1994).
50. G. Müller, D. Weiss, K. v. Klitzing, P. Streda, and G. Weimann, Phys. Rev. B 51, 10236 (1995).
51. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979).
52. P. W. Anderson, E. Abrahams, and T. V. Ramakrishnan, Phys. Rev. Lett. 43, 718 (1979).
53. K. K. Choi, D. C. Tsui, and K. Alavi, Phys. Rev. B 36, 7751 (1987).
54. B. L. Al'tshuler, D. Khmelnitskii, A. I. Larkin, and P. A. Lee, Phys. Rev. B 22, 5142 (1980).
55. Y. Guldner, J. P. Hirtz, J. P. Vieren, P. Voisin, M. Voos, and M. Razeghi, J. Phys. (France) Lett. 43, L613 (1982).
56. R. J. Haug, Semicond. Sci. Technol. 8, 131 (1993).
57. B. W. Alphenaar, P. L. McEuen, R. G. Wheeler, and R. N. Sacks, Phys. Rev. Lett. 64, 677 (1990).
58. P. Svoboda, P. Streda, G. Nachtwei, A. Jaeger, M. Cukr, and M. Láznicka, Phys. Rev. B 45, 8763 (1992).
59. T. Demel, D. Heitmann, P. Grambow, and K. Ploog, Superlattices Microstruct. 9, 285 (1991).
60. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 44, 420 (1980).
61. C. Nguyen, B. Brar, and H. Kroemer, J. Vac. Sci. Technol. B 11, 1706 (1993).
62. K. Shepard, Phys. Rev. B 45, 13431 (1992).
63. B. Das, D. C. Miller, S. Datta, R. Reifenberger, W. P. Hong, P. K. Bhattacharya, J. Singh, and M. Jaffe, Phys. Rev. B 39, 1411 (1989).
64. C. A. Richter, R. G. Wheeler, and R. N. Sacks, Surf. Sci. 263, 270 (1992).
65. S. Komiyama, H. Nii, M. Ohsawa, S. Fukatsu, Y. Shiraki, R. Itoh, and H. Toyoshima, Solid State Commun. 80, 157 (1991).
66. R. J. Nicholas, M. A. Brummell, J. C. Portal, K. Y. Cheng, A. Y. Cho, and T. P. Pearsall, Solid State Commun. 45, 911 (1983).
67. T. Ando, J. Phys. Soc. Jpn. 37, 1233 (1974).
68. F. F. Fang and P. J. Stiles, Phys. Rev. 174, 823 (1968).
69. B. B. Goldberg, D. Heiman, and A. Pinczuk, Phys. Rev. Lett. 63, 1102 (1989).
70. A. Usher, R. J. Nicholas, J. J. Harris, and C. T. Foxon, Phys. Rev. B 41, 1129 (1990).
71. R. J. Nicholas, R. J. Haug, K. v. Klitzing, and G. Weimann, Phys. Rev. B 37, 1294 (1988).
72. P. Ramvall, Q. Du, H. Xu, L. Samuelson, and P. Omling, Phys. Rev. B 53, 1933 (1996).
73. M. F. Tietze, T. Schäpers, J. Appenzeller, G. Engels, M. Hollfelder, B. Lengeler, and H. Lüth, J. Appl. Phys. 79, 871 (1996).
74. P. Ramvall, N. Carlsson, I. Maximov, P. Omling, L. Samuelson, W. Seifert, Q. Wang, and S. Lourdudoss, Appl. Phys. Lett. 71, 918 (1997).