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Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 377-382

Microampere laser threshold at 80°C with InGaAs/GaAs/InGaP buried heterostructre strained quantum well lasers

(5) Nakamura, Koji a Oshiba, Saeko a Nakajima, Michito a Gotoh, Shu a Horikawa, Hideaki a

a OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

BURIED HETEROSTRUCTURES; LASER DIODES;

QUANTUM WELL LASERS;

EID: 0030654614 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00569-6 Document Type: Article

Times cited : (4)

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