Strain-balanced AlGaInAs/InP heterostructures with up to 50 QWs by MBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1120-1125

  Hillmer, H ^a   Losch R ^a   Schlapp, W ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN RATE; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM INDIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0031141847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00825-1     Document Type: Article

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