Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

Surface and Interface Analysis

Volumn 26, Issue 13, 1998, Pages 1008-1015

  Easwarakhanthan, T ^a   Alnot, P ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

Ellipsometry; Silicon; Silicon oxide

Indexed keywords

COMPUTER SIMULATION; ELLIPSOMETRY; ERROR ANALYSIS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS;

NULL ELLIPSOMETRY;

SEMICONDUCTOR JUNCTIONS;

EID: 0032291066     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199812)26:13<1008::AID-SIA449>3.0.CO;2-P     Document Type: Article

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