Interpretation of spectroscopic ellipsometry measurements of ultrathin dielectric layers on silicon: Impact of accuracy of the silicon optical constants

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 64-68

  Tonova, D ^a,b   Depas, M ^b   Vanhellemont, J ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b IMEC   (Belgium)

Author keywords

Dielectrics; Ellipsometry; Silicon; Silicon oxide

Indexed keywords

ELLIPSOMETRY; MODELS; SILICA; SILICON; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; ULTRATHIN FILMS;

SILICON OPTICAL CONSTANTS; SILICON OXYNITRIDES; ULTRATHIN DIELECTRIC LAYERS;

DIELECTRIC FILMS;

EID: 0030290557     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08859-1     Document Type: Article

References (29)

1. M.M. Ibrahim and N.M. Bashara, J. Opt. Soc. Am., 61 (1971) 1622.
2. J.H. Ho, C.L. Lee, C.W. Jen and T.F. Lei, Solid State Elecron., 30 (1987) 973.
3. A. Kalnitski, S.P. Tay, J.P. Ellul, S. Chongsawangvirod, J.W. Andrews and E.A. Irene, J. Electrochem. Soc., 137 (1990) 234.
4. S. Chongasawangvirod, E.A. Irene, A. Kalnitski, S.P. Tay and J.P. Ellul, J. Electrochem. Soc., 137 (1990) 3536.
5. T.S. Chao, C.L. Lee and T.F. Lei, J. Electrochem. Soc., 138 (1991) 1756.
6. G.E. Jellison, Jr., and F.A. Modine, Appl. Opt., 29 (1990) 959.
7. G.E. Jellison, Jr., Opt. Mater., 1 (1992) 41.
8. D.E. Aspnes and A.A. Studna, Phys. Rev. B. 27 (1983) 985.
9. V. Nayar, W.Y. Leong, C. Pickering, A.J. Pidduck, R.T. Carline and D.J. Robbins, Appl. Phys. Lett., 61 (1992) 1304.
10. V. Nayar, C. Pickering, A.J. Pidduck, R.T. Carline, W.Y. Leong and D.J. Robbins, Thin Solid Films, 223 (1993) 40.
11. I.W. Boyd and J.I. Wilson, J. Appl. Phys., 62 (1987) 3195.
12. V. Nayar, C. Pickering and A.M. Hodge, Thin Solid Films, 195 (1991) 185.
13. G.E. Jellison, Jr., J. Appl. Phys., 69 (1991) 7627.
14. G.E. Jellison, Jr., Thin Solid Films, 206 (1991) 294.
15. E. Taft and L. Cordes, J. Electrochem. Soc., 126 (1979) 131.
16. D.E. Aspnes and J.B. Theeten, J. Electrochem. Soc., 127 (1980) 1359.
17. S.H. Kao and R.H. Doremus, J. Electrochem. Soc., 141 (1994) 1832.
18. N.V. Nguen, D. Chandler-Horovitz, P.M. Amirtharaj and J.G. Pellegrino, Appl. Phys. Lett., 64 (1994) 2688.
19. Y. Okada, P.J. Tobin, V. Lakhotia, W.A. Feil, S.A. Ajuria and R.I. Hegde, Appl. Phys. Lett., 63 (1993) 194.
20. T.Y. Chu, W. Ting, J.H. Ahn, S. Lin and D.L. Kwong, Appl. Phys. Lett., 59 (1991) 1412.
21. E.S. Carr, K.A. Ellis and R.A. Buhrman, Appl. Phys. Lett., 66 (1995) 1492.
22. V. Nayar, private communication, 1995.
23. SOPRA S.A. 26 rue Pierre Joigneaux, 92270 Bois-colombes, France.
24. D.E. Aspnes, Proc. SPIE, 276 (1981) 188.
25. M.L. Naiman, C.T. Kirk, B.L. Emerson and J.B. Taitel, J. Appl. Phys., 58 (1985) 779.
26. T.S. Chao, W.H. Chen, S.C. Sun and H.Y. Chang, J. Electrochem. Soc., 140 (1993) 2905.
27. E. Palik (ed.), Handbook of Optical Constants of Solids, Academic Press, New York, 1985, p. 749.
28. F.J. Grunthaner and P.J. Grunthaner, Material Science Reports, North Holland, Amsterdam, 1986, Vol. 1, p. 65.
29. N. Gonon, A. Gagnaire, D. Barbier and A. Glachant, J. Appl. Phys., 70 (1994) 5242.