Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 734-739

  Rebey, A ^a   Beji L ^a   El Jani, B ^a   Gibart, P ^b  

^a UNIVERSITY OF MONASTIR   (Tunisia)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON TETRACHLORIDE; COMPOSITION EFFECTS; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; MORPHOLOGY; REFLECTOMETERS; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

REFLECTOMETRIC SIGNAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032139159     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00384-4     Document Type: Article

References (12)

1. T. Makimoto, N. Kobayashi, H. Ito, T. Ishibashi, Appl. Phys. Lett. 54 (1989) 39.
2. Y. Ashizawa, T. Noda, K. Morizuka, M. Asaka, M. Obara, J. Crystal Growth 107 (1991) 903.
3. S. Kim, M. Kim, S. Min, Solid State Commun. 97 (1996) 875.
4. L.W. Yang, P.D. Wright, V. Eu, Z.H. Lu, Majerfield, J. Appl. Phys. 72 (1992) 2063.
5. J. Lee, I. Kim, B. Chose, J. Appl. Phys. 76 (1994) 5079.
6. S. Kim, Y. Kim, M. Kim, Ch.K. Kim, S. Min, Ch. Lee, J. Crystal Growth 141 (1994) 324.
7. M.C. Hanna, Z.H. Lu, E.W. Mao, T. McCormick, E.G. Oh, A. Majerfield, D.M. Szmyd, J. Crystal Growth 107 (1991) 279.
8. P.M. Enquist, Appl. Phys. Lett. 57 (1990) 2348.
9. M.C. Hanna, Z.H. Lu, A. Majerfield, Appl. Phys. Lett. 58 (1991) 164.
10. M. Born, Wolf, Principals of Optics, Pergamon, Oxford, 1964.
11. Thermodata/INPG/CNRS, B. Cheynet, J.D. Dubois, A. Rivet, 38402 Saint Martain d'Hères Cedex, France.
12. J-S. Lee, I. Kim, B-D. Choe, W.G. Jeong, J. Appl. Phys. 76 (1994) 5079.