Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 382-390

  Li, G ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GAS FLOW VELOCITY;

CARRIER CONCENTRATION; COMPOSITION EFFECTS; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SILANES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031210335     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00138-3     Document Type: Article

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