Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 389-393

  Bayerl, M W ^a   Brandt, M S ^a   Angerer, H ^a   Ambacher, O ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032257279     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<389::AID-PSSB389>3.0.CO;2-Y     Document Type: Article

References (12)

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