Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 2, 1997, Pages

  Bayerl, M W ^a   Brandt, M S ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002680580     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199702)159:23.0.CO;2-1     Document Type: Article

References (5)

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3. H. H. WOODBURY, and G. W. LUDWIG, Phys. Rev. 124, 1083 (1961).
4. E. R. GLASER, T.A. KENNEDY, K. DOVERSPIKE, L. B. ROWLAND, D. K. GASKILL, J. A. FREITAS, JR., M. ASIF KHAN, D. T. OLSON, J. N. KUZNIA, and D. K. WICKENDEN, Phys. Rev. B51, 13326 (1995).
5. W. E. CARLOS, Proc. 7th Int. Conf. on Shallow Level Centers in Semiconductors, Ed. C. A. J. AMMERLAAN and B. PAJOT, World Scientific, Singapore 1996.