Spin-dependent transport in GaN light emitting diodes

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 657-666

  Brandt, M S ^a   Reinacher, N M ^a   Ambacher, O ^a   Stutzmann, M ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; LIGHTING; MAGNETIC RESONANCE; MIS DEVICES; PARAMAGNETIC RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ACCEPTOR RELATED RESONANCE; EFFECTIVE MASS DONOR; ELECTRICALLY DETECTED MAGNETIC RESONANCE; GALLIUM NITRIDE; SPIN DEPENDENT TRANSPORT;

LIGHT EMITTING DIODES;

EID: 0029763868     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)