Recent advances in In(As,Sb) SLS and QW LED's for the 3-10 micron region

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3279, Issue , 1998, Pages 154-160

  Phillips, Chris ^a   Hardaway, Harvey ^a   Heber, Joerg ^a   Moeck, Peter ^a   Pullin, Mark ^a   Tang, Pat ^a   Yuen, Peter ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

AlSb; Auger supression; In(AsSb); InAs; Infrared lasers; Light emitting diodes; Negative luminescence

Indexed keywords

HETEROJUNCTIONS; INFRARED RADIATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

SEMICONDUCTOR EMITTERS;

LIGHT EMITTING DIODES;

EID: 0032225736     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304425     Document Type: Conference Paper

References (17)

1. MBE growth of high-power InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μm
2. 2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to -39 degrees C
3. Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
4. 1-xTe diodes
5. Recent advances in Sb-based midwave-infrared lasers
6. Midinfrared lasers and light-emitting diodes with InAsSb/InAsP strained-layer superlattice active regions
7. Low-threshold quasi-cw type-II quantum well lasers at a wavelengths beyond 4 μm
8. Turn-key, liquid-nitrogen-cooled 3.9 μm semiconductor laser package with 0.2 W CW output
9. Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
10. x strained layer superlattices
11. Infrared (4 -11 μm) quantum cascade lasers
12. Comparison of IR LED gas sensors with thermal source products
13. A heterojunction minority carrier barrier for InSb devices
14. x alloys
15. Band alignments and offsets in In(As,Sb)/InAs superlattices
16. Room temperature LED's for the mid-infrared based on In(As,Sb) strained layer superlattices
17. Picosecond saturable absorption measurements on thin-film single crystal InAs layers grown by MBE