Optical and electrical characteristics of single-quantum-well InGaN light-emitting diodes

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 1173-1178

  Perlin, P ^a   Osinski, M ^a   Eliseev, P G ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON TUNNELING; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER TUNNELING; NITRIDE SEMICONDUCTORS; SINGLE QUANTUM WELL;

LIGHT EMITTING DIODES;

EID: 0030681090     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)