Observation of capacitance hunching at the flat-band-voltage in boron-doped diamond metal/insulator/semiconductor structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 SUPPL. B, 1996, Pages

  Suzuki, Sei ^a   Otsuka, Yuzuru ^a   Maki, Tetsuro ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Boron doping; C V curve; CaF2; Capacitance; Deep level; Diamond film; Field effect; MIS

Indexed keywords

EID: 0011376370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1031     Document Type: Article

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