Thin film CaF 2 stabilizing effect on single-crystal diamond surface

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 570-573

  Yun, Young ^a   Maki, Tetsuro ^a   Kobayashi, Takeshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Accumulation condition; CaF 2; Diamond thin film; Fermi level; FET; MIS; SrTiO 3; Surface stabilization; Temperature gradient method

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FERMI LEVEL; GATES (TRANSISTOR); METAL INSULATOR BOUNDARIES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS;

TEMPERATURE GRADIENT METHOD;

SEMICONDUCTING DIAMONDS;

EID: 17444447916     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80143-2     Document Type: Article

References (5)

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4. T. Kobayashi, S. Suzuki, Y. Otsuka, T. Maki, K. Sakuta, Y. Yun, Int. Conf. on Diamond Film and Applications, Osaka, March 1996.
5. K. Kinoshita, H. Ishibashi, T. Kobayashi, Jpn. J. Appl. Phys. 33 (1994) L417.