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Volumn 45, Issue 11, 1998, Pages 1159-1171

Design of a process variation tolerant CMOS Opamp in 6H-SiC technology for high-temperature operation

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; HIGH TEMPERATURE OPERATIONS; SILICON CARBIDE; TUNING;

EID: 0032205344     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/81.735438     Document Type: Article
Times cited : (7)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.