High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC

Annual Device Research Conference Digest

Volumn , Issue , 1995, Pages 100-101

  Slater Jr , D B ^a   Lipkin, L A ^a   Johnson, G M ^a   Suvorov, A V ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE PROPERTIES; ION IMPLANTATION; MOSFET DEVICES; OHMIC CONTACTS; OPERATIONAL AMPLIFIERS; PLATINUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SILICON CARBIDE;

HIGH TEMPERATURE ENHANCEMENT MODE; RING OSCILLATORS; SHEET RESISTANCE; THRESHOLD VOLTAGE;

MOS DEVICES;

EID: 0029544905     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)