Selective titanium suicide deposition using SiH4-TiCl4-H2 in low-pressure chemical vapor deposition and film characterization

Journal of the Electrochemical Society

Volumn 145, Issue 11, 1998, Pages 3941-3950

  Byun, Jeong Soo ^a   Choi, Song Jun ^a   Kim, Joe Jeong ^a   Choi, Jin Tae ^b   Swenberg, Johanes ^c   Achutharaman, Raman ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Analytical Technology Department   (South Korea)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYMORPHIC TRANSITION; SELECTIVE DEPOSITION; TITANIUM SILICIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 0032205209     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838896     Document Type: Article

References (49)

1. G. Baccarani, M. R. Wordeman, and R. H. Dennard, IEEE Trans. Electron Devices, ED-31, 452 (1984).
2. S. P. Murarka and D. S. Williams, J. Vac. Sci. Technol., B5, 1674 (1987).
3. J. S. Byun, J.-S. Park, and J. J. Kim, J. Electrochem. Soc., 144, 3175 (1997).
4. T. Yamazaki, K. Goto, T. Fukano, Y. Nara, T. Sugii, and T. Ito, Tech. Dig. Electron Devices Meet., 906 (1993).
5. V. Ilderem and R. Reif, J. Electrochem. Soc., 136, 2989 (1989).
6. P. Gouy-Pailler, M. Haond, D. Mathiot, M. Gauneau, A. Perio, and J. L. Gegolini, Appl. Surf. Sci., 73, 25 (1993).
7. K. Saito, T. Amazawa, and Y. Arita, J. Electrochem. Soc., 140, 513 (1993).
8. D. Maury, J. L. Regolini, and P. Gayet, Mater. Res. Soc. Symp., 402, 283 (1996).
9. D. Maury, M. L. Rostoll, P. Gayet, and J. L. Regolini, J. Vac. Sci. Technol., B15, 133 (1997).
10. T. Hara, D. G. Hemmes, and R. S. Rosler, in Chemical Vapor Deposition, G. W. Cullen and J. M. Blocher, Jr., Editors, PV 87-8, p. 867, The Electrochemical Society Proceeding Series, Pennington, NJ (1987)
11. R. S. Rosler and G. M. Engle, J. Vac. Sci. Technol., B2, 733 (1984).
12. J. Lee and R. Reif, J. Electrochem. Soc., 139, 1159 (1992).
13. J. Lee and R. Reif, J. Electrochem. Soc., 139, 1166 (1992).
14. K. Saito and Y. Arita, J. Electrochem. Soc., 143, 3778 (1996).
15. J. Engqvist, U. Jansson, J. Lu, and J.-O. Carlsson, J. Vac. Sci. Technol., A12, 1897 (1994).
16. K. Saito, Y. Higashi, T. Amazawa, and Y. Arita, J. Electrochem. Soc., 141, 1879 (1994).
17. R. P. Southwell and E. G. Seebauer, J. Electrochem. Soc., 144, 2122 (1997).
18. J. L. Regolini, D. Bensahel, G. Bomchil, and J. Mercier, Appl. Surf. Sci., 38, 408 (1989).
19. K. Saito, T. Amazawa, and Y. Arita, Jpn. J. Appl. Phys., 29, L185 (1990).
20. M. A. Mendicino, R. P. Southwell, and E. G. Seebauer, Thin Solid Films, 253, 473 (1994).
21. J. Mercier, J. L. Regolini, and D. Bensahel, J. Electron. Mater., 19, 253 (1989).
22. G. J. Reynolds, C. B. Cooper, and P. J. Gaczi, J. Appl. Phys., 65, 3212 (1989).
23. R. P. Southwell and E. G. Seebauer, J. Vac. Sci. Technol., A13, 221 (1995).
24. E. D. Adams, K. Y. Ahn, and S. B. Brodsky, J. Vac. Sci. Technol., A3, 2264 (1985).
25. R. Beyers and R. Sinclair, J. Appl. Phys., 57, 5240 (1985).
26. T. C. Chou, C. Y. Wong, and K. N. Tu, J. Appl. Phys., 62, 2275 (1987).
27. M. H. Wang and L. J. Chen, J. Appl. Phys., 71, 5918 (1992).
28. Z. Ma, G. Ramanath, and L. H. Allen, Mater. Res. Soc. Symp. Proc., 320, 361 (1994).
29. R. Achutharaman, P. Hey, and J. L. Regolini, Semicond. Int., (Oct 1996).
30. J. L. Regolini, D. Bensahel, J. Mercier, and E. Scheid, J. Crust. Growth, 96, 505 (1989).
31. JCPDS Card No. 29-1362, International Center for Diffraction Data, Swarthmore, PA.
32. JCPDS Card No. 23-1079, International Center for Diffraction Data, Swarthmore, PA.
33. JCPDS Card No. 10-0225, International Center for Diffraction Data, Swarthmore, PA.
34. JCPDS Card No. 31-1384, International Center for Diffraction Data, Swarthmore, PA.
35. J. S Byun, J. Etectrochem. Soc., 143, 1984, (1996).
36. D. A. Porter and K. E. Eastering, Phase Transformations in Metals and Alloys, 2nd ed., Chapman & Hall, New York (1992).
37. J. W. Edington, in Typical Electron Microscope Investigation: Practical Electron Microscopy in Material Science, Vol. 4, K. C. Thompson-Russel and J. W. Edington, Editors, Philips, Eindhoven (1974).
38. A. Catana, P. E. Schmid, M. Heintze, F. Levy, P. Stadelmann, R. Bonnet, J. Appl. Phys., 67, 1820 (1990).
39. J. S. Byun, J. T. Choi, and J. Swenburg, Unpublished.
40. M.-A. Nicolet and S. S. Lau, Formation and Characterization of Transition-Metal Suicides in VLSI Electronics: Microstructure Science, Vol. 6, N. G. Einspruch and G. B. Larrabee, Editors, Academic Press, New York, (1983).
41. Z. X. Xiao, G. A. Rozgonyi, C. A. Canovai, and C. M. Osburn, Mater. Res. Soc. Symp., 202, 101 (1992).
42. T. Nolan, R. Beyers, and R. Sinclair, Mater. Res. Soc. Symp., 202, 95 (1992).
43. S. L. Hsia, T. Y. Tan, P. Smith, and G. E. Mc Guire, J. Appl. Phys., 72, 1986 (1992).
44. J. W. Edington, in Interpretation of Transmission Electron Micrographs: Practical Electron Microscopy in Material Science, Vol. 3, K. C. Thompson-Russel and J. W. Edington, Editors, Philips, Eindhoven (1974).
45. Y. Tezuka, N. Kitano, and N. Nakano, J. Electrochem. Soc., 142, 3596 (1995).
46. M. Sekme, K. Inoue, H. Ito, I. Honma, H. Miyamoto, K. Yoshida, H. Watanabe, K. Mikagi, Y. Yamada, and T. Kikkawa, Tech. Dig. Electron Devices Meet., 493 (1994).
47. K. Maex, G. Ghosh, L. Delaey, V. Probet, P. Lippens, L. Van den hove, and R. F. De Keersmeecker, J. Mater. Res., 4, 1209 (1989).
48. K. Maex, R. F. De Keersmaecker, G. Ghosh, L. Delaey, and V Probst, J. Appl. Phys., 66, 5327 (1989).
49. R. Beyers, D. Coulman, and P. Merchant, J. Appl. Phys., 61, 5110 (1987).