Effect of deposition temperature and sputtering ambient on in situ cobalt silicide formation

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3175-3179

  Byun, Jeong Soo ^a   Park, Ji Soo ^a   Kim, Jae Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMS; ELECTRIC PROPERTIES; GRAIN SIZE AND SHAPE; NITROGEN; PHASE TRANSITIONS; SILICON WAFERS; SPUTTER DEPOSITION; SURFACE PROPERTIES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COBALT SILICIDE; POLYMORPHIC CHANGE; SURFACE MOBILITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031238064     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837978     Document Type: Article

References (13)

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