Feasibility of monolithic device integration in GaInP/AlGaInP using Photoabsorption Induced Disordering

Optics InfoBase Conference Papers

Volumn , Issue , 1996, Pages 232-234

  McIlvaney, Karen ^a   McKee, Andrew ^a   Bryce, A Catrina ^a   Marsh, John H ^a   Jones, Wynn ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Epitaxial Prod International Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84889198750     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S.S. Ou, JJ. Yang, MJansen, C.Hess, P. Hayashida, C. Tu and F. Alverez, "High power, reliable 645nm compressively strained GaInP/GaA1InP laser diodes", Electronics Letters, 30,1303-1305, (1994)
2. A. McKee, C. J. McLean, A. C. Bryce, R. M. De La Rue, C. Button and J. H. Marsh: "High quality GaInAs/GaInAsP quantum well lasers wavelength tuned using photo-absorption induced disordering"-Appl Phys Lett,65, 2263-2265 (1994).
3. G. Lullo, A. McKee, C. J. McLean, A. C Bryce, C. Button and J. H. Marsh: "Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiple quantum well structures"-Electron Lett, 30, 1623-1625 (1994).