Performance, uniformity, and yield of 850-nm VCSEL's deposited by MOVPE

IEEE Photonics Technology Letters

Volumn 8, Issue 1, 1996, Pages 7-9

  Hibbs Brenner, M K ^a,b   Morgan, R A ^a,b   Walterson, R A ^a   Lehman, J A ^a   Kalweit, E L ^a   Bounnak, S ^a   Marta, T ^a   Gieske, R ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; PERFORMANCE; VOLTAGE MEASUREMENT;

PLANAR PROTON IMPLANT PROCESS; THRESHOLD CURRENT; THRESHOLD VOLTAGE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029754199     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475760     Document Type: Article

References (6)

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2. R. A. Morgan, "High performance, producible VCSEL arrays for optical interconnects," J. High-Speed Electron. Syst., vol. 5, no. 4, 1994.
3. Y. H. Lee, B. Tell, K. Brown-Goebler, and J. L. Jewell, "Top-surface-emitting GaAs four-quantum-well lasers emitting at 0.85 μm," Electron. Lett., vol. 26, pp. 710-711, 1990.
4. S. Sun, E. Armour, K. Zheng, and S. D. Hersee, "Ultra-uniform MOCVD growth of GaAs/AlGaAs for VCSEL's," in Proc. 7th Biennial Workshop Organo Metalic Vapor Phase Epitaxy, Fort Meyers, FL, Apr. 2-6, 1995, to be published in J. Electron. Materials.
5. Q. Paduano, D. Weyburne, F. Lu and R. Bhat, "Evaluation and optimization of large area OMVPE growth uniformity using a Fabry-Perot micro cavity test structure," in Proc. 7th Biennial Workshop Organo Metalic Vapor Phase Epitaxy, Fort Meyers, FL, Apr. 2-6, 1995, to be published in J. Electron. Materials.
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