A model for the drain current of deep submicrometer MOSFET's including electron-velocity overshoot

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2249-2251

  Roldan J B ^a   Gamiz F ^a   Lopez Villanueva, J A ^a   Cartujo, P ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Mos devices; Semiconductor device modeling

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

OVERSHOOT EFFECTS;

MOSFET DEVICES;

EID: 0032188235     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725262     Document Type: Article

References (6)

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3. S. Y. Chou D. A. Antoniadis and H. I. Smith Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon IEEE Electron Device Lett. vol. EDL-6 p. 665 1985.
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