Ultra-high-speed strain-compensated MQW lasers with reduced carrier transport effect and enhanced differential gain

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 399-402

  Matsui, Yasuhiro ^a   Suzuki, Akira ^a   Ogawa, Yoh ^a  

^a Femtosecond Technology Research   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CALCULATIONS; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; LIGHT MODULATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER TRANSPORT EFFECT; DIFFERENTIAL GAIN; INDIUM GALLIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIC PHOSPHIDE; STRAIN COMPENSATION;

QUANTUM WELL LASERS;

EID: 0032287780     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)