30GHz bandwidth, 1.55μm MQW-DFB laser diode based on a new modulation scheme

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 896-897

  Goutain, E ^a   Renaud, J C ^a   Krakowski, M ^a   Rondi, D ^a   Blondeau, R ^a   Decoster, D ^b  

^a THALES   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

BANDWIDTH; CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; DISTRIBUTED FEEDBACK LASERS; ELECTRODES; MILLIMETER WAVES; MODULATION; Q SWITCHING; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

ABSORBER MODULATION; OPTICAL MICROWAVE LINKS; SATURATION PHOTON DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030576234     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960588     Document Type: Article

References (7)

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