Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 84-85

  Kuo, J B ^a   Su, K W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

SIDE WALL RELATED NARROW CHANNEL EFFECTS;

MOS DEVICES;

EID: 0031352397     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)