Interface-induced phenomena in type II antimonide-arsenide heterostructures

IEE Proceedings: Optoelectronics

Volumn 145, Issue 5, 1998, Pages 268-274

  Mikhailova, M P ^a   Moiseev, K D ^a   Berezovets, Y A ^a   Parfeniev, R V ^a   Bazhenov, N L ^a   Smirnov, V A ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Antiinonide arsenide heterostructiires; Tiiiiclliiig injcction lasers

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BROKEN-GAP INTERFACE; INTERFACE CARRIERS; MAGNETOTRANSPORT PROPERTIES; MID-INFRARED TUNNELLING-INJECTION LASERS; SHUBNIKOV-DE HAAS OSCILLATION;

INJECTION LASERS;

EID: 0032180566     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19982305     Document Type: Article

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