Novel plasma control method in PECVD for preparing microcrystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 397-401

  Nishimiya, T ^a   Kondo, M ^a   Matsuda, A ^a  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GLOW DISCHARGES; GRAIN SIZE AND SHAPE; ION BOMBARDMENT; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

BIASED WALL METHOD; CRYSTALLINITY; GROWTH RATE; MICROCRYSTALLINE SILICON; PLASMA CONTROL METHOD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0031359875     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-397     Document Type: Conference Paper

References (6)