Metal-nitride-semiconductor capacitors on 6H-SiC

Materials Science Forum

Volumn 264-268, Issue pt 2, 1998, Pages 881-884

  Berberich, S ^a   Godignon, P ^a   Millan, J ^a   Planson, D ^a   Hartnagel, H L ^a   Senes, A ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARRIER CONCENTRATION; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

CHARGE TRAPPING; METAL NITRIDE SEMICONDUCTOR (MNS) CAPACITORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031648185     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.264-268.881     Document Type: Article

References (8)