Fully functional high speed 4-bit A/D converters using InAlAs/InGaAs HBTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 159-162

  Tran, L ^a   Southwell, S ^a   Velebir, J ^a   Oki, A ^a   Streit, D ^a   Oyama, B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; ENERGY DISSIPATION; ETCHING; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH SPEED CONVERTERS; POWER DISSIPATION;

BIPOLAR TRANSISTORS;

EID: 0027830181     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)