39.5-GHz Static Frequency Divider Implemented in AlInAs/GalnAs HBT Technology

IEEE Electron Device Letters

Volumn 13, Issue 12, 1992, Pages 612-614

  Hafizi, Madjid ^a   Jensen, Joseph F ^a   Metzger, Robert A ^a   Stanchina, William E ^a   Rensch, David B ^a   Allen, Young K ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT GAIN; GRADED EMITTER-BASE (E-B) JUNCTION; HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS); STATIC DIVIDE-BY-4 FREQUENCY DIVIDER; UNITY GAIN CUTOFF FREQUENCY;

FREQUENCY DIVIDING CIRCUITS;

EID: 0026995953     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192861     Document Type: Article

References (11)

1. J.F. Jensen et al., “36 GHz static digital frequency divider in AlInAs/GalnAs HBT technology,” presented at the 49th Annual Device Research Conf., 1991.
2. Y. Yamauchi, O. Nakajima, K. Nagata, H. Ito, and T. Ishibashi, “A 34.8 GHz static frequency divider using GaAs/AlGaAs HBT's,” in 1989 GaAs IC Symp. Tech. Dig., pp. 121–124.
3. K. Asai and T. Ishibashi, “GaAs MESFET and HBT technology in picosecond electronics,” presented at the 1989 Picosecond Electronics and Optoelectronics Topical Meeting.
4. U.K. Mishra et al., “Ultrahighspeed digital circuit performance in 0.2-μm gate-length AlInAs/GalnAs HEMT technology,” IEEE Electron Device Lett., vol. 9, pp. 482–484, Sept. 1988.
5. M. Kurisu et al., “A Si bipolar 21 GHz 320 mW static frequency divider,” in 1991 ISSCC Dig. Tech. Papers, pp. 158–159.
6. C.W. Farley et al., “A highspeed, low-power divide-by-4 frequency divider implemented with AlInAs/GalnAs HBT's,” IEEE Electron Device Lett., vol. 10, pp. 377–379, Aug. 1989.
7. R.A. Metzger et al., “Be diffusion at the emitter-base junction of graded AlInAs/GalnAs HBT's,” J. Vac. Sci. Technol. B, Dec. 1992.
8. W.E. Stanchina et al., “Processing techniques for the fabrication of highspeed AlInAs/GalnAs HBT circuits,” in Proc. State-of-the-Art Program Compound Semiconductors (Montreal), 1990.
9. J.F. Jensen et al., “AlInAs/GalnAs HBT IC technology,” IEEE J. Solid-State Circuits, vol. 26, pp. 415–421, Mar. 1991.
10. M. Hafizi, C.R. Crowell, and M.E. Grupen, “The dc characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling,” IEEE Trans. Electron Devices, vol. 37, pp. 2121–2129, Oct. 1990.
11. M. Hafizi et al., “The effects of base dopant diffusion on dc and rf characteristics of AlInAs/GalnAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 13, pp. 140–142, Mar. 1992.