A novel thin film transistor using double amorphous silicon active layer

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2074-2076

  Choi, Jong Hyun ^a   Kim, Chang Soo ^a   Lim, Byung Cheon ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CHLORINE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; HYDROGEN; LEAKAGE CURRENTS; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS; THRESHOLD VOLTAGE;

HYDROGENATED AMORPHOUS SILICON; REMOTE PLASMA CHEMICAL VAPOR DEPOSITION; SOURCE DRAIN METALS;

THIN FILM TRANSISTORS;

EID: 0032163174     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711377     Document Type: Article

References (9)

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