Voltage dependence of off current in a-Si:H TFT under backlight illumination

Journal of Non-Crystalline Solids

Volumn 164-166, Issue PART 2, 1993, Pages 747-750

  Yoon, J K ^c   Jang, Y H ^c   Kim, B K ^c   Choi, H S ^c   Ahn, B C ^a   Lee, C ^b  

^a LG Electronics Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC PROPERTIES; SILICON; SOLID STATE PHYSICS; TRANSISTORS;

BACKLIGHT ILLUMINATION; CHANNEL CONDUCTANCE; DRAIN JUNCTION; HOLE ACCUMULATION; HYDROGENATED AMORPHOUS SILICON; PHOTOGENERATION; THIN FILM TRANSISTORS; VOLTAGE DEPENDENCE;

THIN FILM DEVICES;

EID: 17644449312     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(93)91105-C     Document Type: Article

References (5)

1. Studies of the Stability of Amorphous Silicon Thin Film Transistors
2. High Temperature off Current in a-Si TFTS - Effect of Process and Structure
3. The Application of Hydrogenation to Amorphous Silicon Thin Film Transistors for the Decrease of the off Current
4. Effect of Residual Phosphorus on Amorphous Silicon Thin Film Transistors