Radiative properties of SIMOX

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

Volumn 21, Issue 3, 1998, Pages 441-448

  Ravindra, Nuggehalli M ^a,b   Abedrabbo, Sufian ^b   Gokce, Oktay H ^b   Tong, Feiming ^b   Patel, Anamika ^b   Velagapudi, Rajasekhar ^b   Williamson, Gary D ^c   Maszara, Witold P ^a,c  

^a IEEE   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c SEMATECH   (United States)

Author keywords

Emissivity; Pyrometer; Radiative properties; SIMOX; SOI; Temperature measurement

Indexed keywords

MOS DEVICES; PYROMETERS; PYROMETRY; SILICON ON INSULATOR TECHNOLOGY;

SPECTRAL EMISSOMETERS;

SILICON WAFERS;

EID: 0032156537     PISSN: 10709886     EISSN: None     Source Type: Journal    
DOI: 10.1109/95.725208     Document Type: Article

References (13)

1. R. Schork and H. Ryssel, "Formation of ultra thin SOI-layer by implantation of nitrogen," in Proc. IEEE Int. SOI Conf., 1992, pp. 16-20.
2. M. Alles and S. Wilson, "Thin film silicon on insulator: An enabling technology," Semiconductor Int., pp. 67-74, Apr. 1997.
3. I. P. Lisovskii, A. G. Revesz, and H. L. Hughes, "Infrared absorption study of buried oxide of single and triple-implanted SIMOX structures," in Proc. 7th Int. Symp. Silicon-on-Insulator Technol. Devices, May 1996, pp. 133-141.
4. G. Ghislotti et al., "Characterization of SOI-SIMOX structures using Brillouin light scattering," Mater. Sci. Eng., vol. B36, pp. 129-132, 1996.
5. A. H. Jayatissa et al., "Spectroscopic ellipsometry of SIMOX (separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer," Jpn. J. Appl. Phys., vol. 36, no. 5A, pt. 1, pp. 2581-2586, 1997.
6. J. R. Markham, K. Kensella, R. M. Carangelo, C. B. Brouillitte, M. D. Carangelo, P. E. Best, and P. R. Solomon, "A bench top Fourier transform infrared based instrument for simultaneously measuring surface spectral emittance and temperature," Rev. Sci. Instrum., vol. 64, no. 9, pp. 2515-2522, Sept. 1993.
7. G. E. Jellison, Jr. and F. A. Modine, "Optical functions of silicon at elevated temperatures," J. Appl. Phys., vol. 76, pp. 3758-3761, 1994.
8. H. H. Li, "Refractive index of silicon and germanium and its wavelength and temperature dependencies," J. Phys. Chem. Ref. Data 9, p. 561, 1980.
9. N. M. Ravindra, S. Abedrabbo, W. Chen, F. Tong, A. K. Nanda, and A. C. Speranza, "Temperature-dependent emissivity of silicon-related materials and structures," IEEE Trans. Semiconduct. Manufact., vol. 11, pp. 30-39, 1998.
10. N. M. Ravindra, W. Chen, F. M. Tong, and A. Nanda, "Emissivity measurements and modeling - An overview," in Transient Thermal Processing Techniques in Electronic Materials, N. M. Ravindra and R. K. Singh, Eds. Warrendale, PA: TMS, 1996, pp. 159-164.
11. P. Vandenabeele and K. Maex, "Influence of temperature and backside roughness on the emissivity of Si wafers during rapid thermal processing," J. Appl. Phys., vol. 72, pp. 5867-5875, 1992.
12. F. Abeles, "Optics of thin films," in Advance Optical Techniques, A. C. S. Van Heel, Ed. New York: Elsevier, 1967, pp. 143-188.
13. S. Abedrabbo, N. M. Ravindra, W. Chen, V. Rajasekhar, T. Golota, O. H. Gokce, A. T. Fiory, B. Nguyenphu, A. Nanda, T. Speranza, W. Maszara, and G. Williamson, "Temperature dependent emissivity of multilayers on silicon," in Proc. Mater. Res. Soc., Warrendale, PA, 1997, vol. 470, pp. 69-79.