Initial growth of polycrystalline silicon films on substrates subjected to different plasma treatments

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4711-4717

  Hasegawa, Seiichi ^a   Uchida, Noriyuki ^a   Takenaka, Satoshi ^a,b   Inokuma, Takao ^a   Kurata, Yoshihiro ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Crystallinity; Electron spin resonance; Plasma treatment on substrates; Polycrystalline Si; Stress; Surface morphology of films; Surface morphology of substrates

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; GRAIN SIZE AND SHAPE; MORPHOLOGY; PARAMAGNETIC RESONANCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SURFACE ROUGHNESS; TEXTURES; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; PLASMA EXCITATION; POLYCRYSTALLINE SILICON FILMS;

SEMICONDUCTING SILICON;

EID: 0032154892     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4711     Document Type: Article

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