메뉴 건너뛰기




Volumn 36, Issue 11, 1997, Pages 6625-6632

Effects of the addition of SiF4 to the SiH4 feed gas for depositing polycrystalline silicon films at low temperature

Author keywords

Polycrystalline silicon; Surface morphology; Surface roughness; Thin film

Indexed keywords

CHEMICAL CLEANING; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; GRAIN SIZE AND SHAPE; MORPHOLOGY; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILANES; SURFACE ROUGHNESS; THIN FILMS;

EID: 0031274125     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6625     Document Type: Article
Times cited : (14)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.