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Volumn 36, Issue 11, 1997, Pages 6625-6632
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Effects of the addition of SiF4 to the SiH4 feed gas for depositing polycrystalline silicon films at low temperature
a a a a |
Author keywords
Polycrystalline silicon; Surface morphology; Surface roughness; Thin film
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Indexed keywords
CHEMICAL CLEANING;
CHEMICAL VAPOR DEPOSITION;
COMPOSITION EFFECTS;
CRYSTAL ORIENTATION;
GRAIN SIZE AND SHAPE;
MORPHOLOGY;
PLASMA APPLICATIONS;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SILANES;
SURFACE ROUGHNESS;
THIN FILMS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);
SILICON TETRAFLUORIDE;
SURFACE MIGRATION;
SEMICONDUCTING FILMS;
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EID: 0031274125
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.6625 Document Type: Article |
Times cited : (14)
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References (26)
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