-
1
-
-
0023401686
-
-
IEEE J. Solid-Stat Circuits, vol. SC-22, pp. 558-565, 1987.
-
B. J. Sheu, D. L. Scharfetter, P. K. Ko, and M. C. Jeng, "BSIM: Berkele short-channel IGFET model for MOS transistors," IEEE J. Solid-Stat Circuits, vol. SC-22, pp. 558-565, 1987.
-
"BSIM: Berkele Short-channel IGFET Model for MOS Transistors,"
-
-
Sheu, B.J.1
Scharfetter, D.L.2
Ko, P.K.3
Jeng, M.C.4
-
2
-
-
33747487776
-
-
M. C. Jeng, "Design and modeling of deep-submicrometer MOSFET's, ERL Memo. ERL M90/90, Univ. California, Berkeley, 1990.
-
"Design and Modeling of Deep-submicrometer MOSFET's, ERL Memo. ERL M90/90, Univ. California, Berkeley, 1990.
-
-
Jeng, M.C.1
-
3
-
-
0017932965
-
-
Solid-Stat Electron., vol. 21, pp. 345-355, 1978.
-
J. R. Brews, "A charge-sheet model of the MOSFET," Solid-Stat Electron., vol. 21, pp. 345-355, 1978.
-
"A Charge-sheet Model of the MOSFET,"
-
-
Brews, J.R.1
-
4
-
-
0028424481
-
-
IEEE Trans. Computer-Aided Design, vol. 13, no. 5, p 564, 1994.
-
M. Miura-Mattausch, "Analytical MOSFET model for quarter micro technologies," IEEE Trans. Computer-Aided Design, vol. 13, no. 5, p 564, 1994.
-
"Analytical MOSFET Model for Quarter Micro Technologies,"
-
-
Miura-Mattausch, M.1
-
5
-
-
0027187367
-
-
IEEE Trans. Electron Devices, vol. 40, pp. 86-95, Jan 1993.
-
Z. H. Liu, C. Hu, J. H. Huang, T. Y. Chan, M. C. Jeng, P. K. Ko and Y. C. Cheng, "Threshold voltage model for deep-submicromete MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 86-95, Jan 1993.
-
"Threshold Voltage Model for Deep-submicromete MOSFET's,"
-
-
Liu, Z.H.1
Hu, C.2
Huang, J.H.3
Chan, T.Y.4
Jeng, M.C.5
Ko, P.K.6
Cheng, Y.C.7
-
6
-
-
0003997954
-
-
Univ. California Berkeley, Memo. UCB/ERL M97/2, 1997.
-
Y. Cheng, M. Chan, K. Hui, M.-C. Jeng, Z. Liu, J. Huang, K. Chen P. K. Ko, and C. Hu, BSIM3 Version 3 User's Manual, Univ. California Berkeley, Memo. UCB/ERL M97/2, 1997.
-
BSIM3 Version 3 User's Manual
-
-
Cheng, Y.1
Chan, M.2
Hui, K.3
Jeng, M.-C.4
Liu, Z.5
Huang, J.6
Chen, P.K.7
Ko, K.8
Hu, C.9
-
9
-
-
33747471058
-
-
presented a the 1995 Int. Semiconductor Devices Res. Symp., Charlottesville, VA Dec. 1995.
-
Y. Cheng, C. Hu, K. Chen, M. Chan, M. Jeng, Z. Liu, J. Huang, an P. Ko, "A unified BSIM I-V mode for circuit simulation," presented a the 1995 Int. Semiconductor Devices Res. Symp., Charlottesville, VA Dec. 1995.
-
"A Unified BSIM I-V Mode for Circuit Simulation,"
-
-
Cheng, Y.1
Hu, C.2
Chen, K.3
Chan, M.4
Jeng, M.5
Liu, Z.6
Huang, J.7
Ko, A.P.8
-
10
-
-
0031078092
-
-
IEEE Trans. Electron Devices, vol 44, pp. 277-287, Feb. 1997.
-
Y. Cheng, M.-C. Jeng, Z. Liu, J. Huang, M. Chan, K. Chen, P. K Ko, and C. Hu, "A physical and scalable BSIM3v3 I-V model fo analog/digital circuit simulation," IEEE Trans. Electron Devices, vol 44, pp. 277-287, Feb. 1997.
-
"A Physical and Scalable BSIM3v3 I-V Model Fo Analog/digital Circuit Simulation,"
-
-
Cheng, Y.1
Jeng, M.-C.2
Liu, Z.3
Huang, J.4
Chan, M.5
Chen, K.6
Ko, P.K.7
Hu, C.8
|