Source-drain burnout mechanism of GaAs power MESFETs: Three terminal effects

Solid-State Electronics

Volumn 41, Issue 3, 1997, Pages 391-399

  Takamiya, Saburo ^a   Sonoda, Takuji ^a   Yamanouchi, Masahide ^a   Fujioka, Takashi ^a   Kohno, Masaki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; FEEDBACK; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

SCHOTTKY GATES; SOURCE DRAIN BURNOUT;

MESFET DEVICES;

EID: 0031096669     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00147-5     Document Type: Article

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